Multi-chamber MOCVD growth apparatus for high performance/high throughput

ABSTRACT

In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substrate using vapor deposition in a first deposition chamber followed by evacuation of the growth chamber to reduce vapor deposition source gases remaining in the first deposition chamber after the deposition growth and prior to opening the chamber. The substrate is transferred to a second deposition chamber while isolating the first deposition chamber from the second deposition chamber to prevent reactants present in the first chamber from affecting deposition in the second chamber and while maintaining an ambient that minimizes or eliminates growth stop effects. After the transferring step, an additional layer of a different semiconductor material is deposited on the first deposited layer in the second chamber using vapor deposition.

More than one reissue application has been filed for the reissue of U.S.Pat. No. 7,368,368. The reissue applications are application Ser. Nos.13/097,601 and 12/774,345 (the present application). Application Ser.No. 13/097,601 is a continuation reissue application of the presentreissue application Ser. No. 12/774,345.

BACKGROUND OF THE INVENTION

The present invention is related to vapor deposition growth ofsemiconductor materials and to associated apparatus and methods. Morespecifically, the present invention is related to a wafer processingapparatus and a wafer processing method for reducing reactant memory inthe relevant apparatus chambers.

Crystal growth from vapor is employed in semiconductor technology, inparticular, for producing epitaxial layers on semiconductor wafers. Theterm epitaxy typically describes the growth of a monocrystalline layeron the planar boundary surface of a monocrystalline substrate, generallya substrate wafer of a semiconductor material.

Epitaxial growth is often carried out using chemical vapor deposition(CVD) in CVD reactors. In such processes, the semiconductor wafer isfirst heated and then exposed to a gas mixture, referred to as a processgas. The process gas mixture typically consists of a source gas, acarrier gas, and, where appropriate, a dopant gas. The source gas (orgases) provides the elements that form the desired semiconductor; e.g.trimethyl gallium and ammonia to form gallium nitride. The dopant gasescarry (typically as compounds) elements that add p or n-typeconductivity to the epitaxial layer; e.g. magnesium to obtain p-typegallium nitride. The source and dopant gases react on or near the hotsubstrate surface to form the desired epitaxial layer.

In a typical CVD process, reactant gases (often diluted in a carriergas) at room temperature enter the reaction chamber. The gas mixture isheated as it approaches the deposition surface, heated radiatively, orplaced upon a heated substrate. Depending on the process and operatingconditions, the reactant gases may undergo homogeneous chemicalreactions in the vapor phase before striking the surface. Near thesurface thermal, momentum, and chemical concentration boundary layersform as the gas stream heats, slows down due to viscous drag, and thechemical composition changes. Heterogeneous reactions of the sourcegases or reactive intermediate species (formed from homogeneouspyrolysis) occur at the deposition surface forming the depositedmaterial. Gaseous reaction by-products are then transported out of thereaction chamber.

Because a p-n junction is a fundamental element in many semiconductordevices, epitaxial layers of opposite conductivity type are often grownconsecutively to one another on the substrate, typically by changing thecomposition of the dopant gas at a desired point during the growthprocess. Similarly, when heterostructures are produced using CVD, thecomposition of the source gases is similarly changed.

Such changes in source or dopant gas composition can lead to a problemreferred to as “reactant memory.” The term “reactant memory” describesthe undesired contamination of the process gas with source or dopantcompositions or elements that remain in the chamber from previousdeposition steps. At elevated temperatures, dopant and sourcecompositions are capable of sticking to the reactor walls andpotentially re-evaporating during following epilayer depositions. When,for example, dopants re-evaporate, the possibility exists that thedopants will be included or incorporated in the subsequent epi layers.In such layers the dopants can act as impurities or can change theelectronic characteristics of the layers and the subsequent devices.This effect is often more pronounced for aluminum and boron than fornitrogen in SiC epitaxy. The effect is also pronounced for telluriumandzinc in GaAs epitaxy and for magnesium in GaN epitaxy.

Doping control is intricate in the epitaxial growth procedure. Thebackground doping can be limited by using purified gases, and high-gradematerials in the critical parts of the reactor. Memory effects fromearlier growth steps where dopants have been intentionally introducedare also problematic.

Several attempts have been made to overcome the problems associated withreactant memory. One such attempted solution is site-competitionepitaxy. Site-competition epitaxy is based on the competition between,for example, SiC and dopant source gases for the availablesubstitutional lattice sites on the growing SiC crystal surface. In thiscase, dopant incorporation is controlled by appropriately adjusting theSi:C ratio within the growth reactor to affect the amount of dopantatoms incorporated into these sites, either carbon-lattice sites (Csites) or silicon lattice sites (Si sites), located on the active growthsurface of the SiC crystal. This technique has also been utilized forarsenide and phosphide growth. By using site-competition epitaxy, theimpurity level of the epilayer can be controlled by adjusting the C:Siratio, while the n-type dopant nitrogen is increased at a low C:Siratio. Hence, the C:Si ratio must be chosen to limit the dominationdopant to grow low-doped material, while intentionally doped materialmust be grown under the C:Si ratio most suited for the dopant of choice.

Previous methods for counteracting reactant memory have also includedcleaning the reactor after each deposition, baking out the reactor, andburying the dopant by re-coating the reactor walls. Another method forcontrolling the effect includes etching the reactor walls after eachdoped layer has been grown, for example using hydrogen or a hydrochloricacid. Combinations of an etch and an active C:Si ratio control have alsobeen utilized to avoid the problems of reactant memory. These solutions,however, suffer from several drawbacks. Each method is time-consumingand reduces output, and adds additional processing steps to thetechnique. These methods may also result in growth stop effects such aspoor adhesion between layers. Moreover, the various proposed solutionsto the problem of reactant memory can also be costly additions toproduction of the desired devices.

Defect control has been considerably improved by optimizing the cleaningprocedure before growth, both ex-situ before loading, and in-situ aspart of the growth sequence. Reactant memory has not, however, beensufficiently reduced using these techniques to allow for efficient lowdoping epitaxial growth of multiple layers in some processes. It wouldtherefore be desirable to develop an improved and more efficienttechnique for epitaxial growth while avoiding defects caused by reactantmemory.

SUMMARY OF THE INVENTION

In one embodiment the present invention is a method of conductingmultiple step multiple chamber chemical vapor deposition while avoidingreactant memory in the relevant reaction chambers. The method includesdepositing a layer of semiconductor material on a substrate using vapordeposition in a first deposition chamber followed by evacuation of thegrowth chamber to reduce vapor deposition source gases remaining in thefirst deposition chamber after the deposition growth and prior toopening the chamber. The substrate is transferred to a second depositionchamber while isolating the first deposition chamber from the seconddeposition chamber to prevent reactants present in the first chamberfrom affecting deposition in the second chamber and while maintaining anambient that minimizes or eliminates growth stop effects. After thetransferring step, an additional layer of a different semiconductormaterial is deposited on the first deposited layer in the second chamberusing vapor deposition.

In a second embodiment, the invention is a method of conducting multiplestep multiple semiconductor chemical vapor deposition while avoidingreactant memory in the relevant reaction chambers. The method includesdepositing a layer of a first semiconductor material on a substrateusing vapor deposition in a first deposition chamber, followed byevacuation of the growth chamber to reduce vapor deposition source gasesremaining in the first deposition chamber following the depositiongrowth and prior to opening the chamber. The substrate is transferred toa second deposition chamber while isolating the first deposition chamberfrom the second deposition chamber to prevent reactants present in thefirst chamber from affecting deposition in the second chamber and whilemaintaining an ambient that minimizes or eliminates growth stop effects.After the transferring step, a second layer of a different semiconductormaterial is deposited on the substrate in the second chamber using vapordeposition. After the second layer is deposited and prior to opening thesecond deposition chamber, the vapor deposition source gases areevacuated from the second deposition chamber to reduce vapor depositionsource gases remaining in the second deposition chamber following thedeposition growth and the substrate is transferred to the firstdeposition chamber while isolating the second deposition chamber fromthe first deposition chamber to prevent reactants present in the secondchamber from affecting deposition in the first deposition chamber andwhile maintaining an ambient that minimizes or eliminates growth stopeffects. After the transferring step, an additional layer of the firstsemiconductor material is deposited on the second deposited layer in thefirst chamber using vapor deposition.

In another embodiment, the invention is an apparatus for reducingreactant memory during chemical vapor deposition growth of semiconductormaterials. The apparatus includes two vapor deposition growth processingchambers for conducting chemical vapor deposition of a semiconductormaterial on a substrate; and a transfer chamber between and incommunication with said deposition chambers for conveying a substratebetween said deposition chambers without passing the substrate directlyfrom one of said chambers to the other. The apparatus further includestwo process isolation valves each of which is in communication with oneof the respective deposition chambers and both of which are incommunication with the transfer chamber for isolating said depositionchambers from said transfer chamber during vapor deposition growth insaid chambers. The apparatus also includes means for conveying asubstrate from one of the deposition chambers to the transfer chamberand thereafter from the transfer chamber to the other of the depositionchambers.

In a different embodiment, an apparatus for reducing reactant memoryduring chemical vapor deposition growth of semiconductor materials isprovided. The apparatus includes at least one vapor depositionprocessing chamber for conducting chemical vapor deposition of n-typeepitaxial layers on a substrate or previously deposited layer and atleast one vapor deposition processing chamber for conducting chemicalvapor deposition of p-type epitaxial layers on a substrate or previouslydeposited layer. The apparatus also includes at least one transferchamber for transferring a substrate between said vapor depositionprocessing chambers and at least two process isolation valves, each ofwhich is in communication with one of said respective depositionchambers and both of which are in communication with said transferchamber for isolating said deposition chambers from said transferchamber during vapor deposition growth in said chambers. The apparatusalso includes means for transferring a substrate from one of saiddeposition chambers to said transfer chamber and thereafter from saidtransfer chamber to other of said deposition chambers.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be understood more fully from the detaileddescription given here below and from the accompanying drawings of thepreferred embodiments of the invention. The drawings, however, are notintended to imply limitation of the invention to a specific embodiment,but are for explanation and understanding only.

FIG. 1 is a schematic depiction of a processed wafer formed inaccordance with one embodiment of the present invention.

FIGS. 2A and 2B are schematic depictions of a two-chambered apparatus inaccordance with the present invention and a method of use.

FIG. 3 is a schematic depiction of a processed wafer formed inaccordance with another embodiment of the present invention.

FIGS. 4A-4C are schematic depictions of a three-chambered apparatus inaccordance with the present invention, and a method of use.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The present invention now will be described more fully hereinafter withreference to the accompanying drawings, in which preferred embodimentsof the invention are shown. This invention may, however, be embodied inmany different forms and should not be construed as limited to theembodiments set forth herein; rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of the invention to those skilled in the art. In thedrawings, the thickness of layers and regions are exaggerated forclarity. It will be understood that when an element such as a layer,region or substrate is referred to as being “on” another element, it canbe directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” another element, there are no intervening elements present. It willalso be understood that references to a “wafer” includes one wafer aswell as multiple wafers, and that wafer carriers may optionally beincluded in any reference to wafers. Moreover, the wafers may betransferred to different wafer carriers throughout the processing steps.

The invention described herein is a wafer processing apparatus and awafer processing method for reducing reactant memory in the relevantapparatus chambers. FIG. 1 depicts a representative processed wafer, forexample a semiconductor device precursor 10, formed in accordance withone embodiment of the invention. As illustrated in FIG. 1, an n-GaN 12layer is located on a SiC substrate 14. A p-GaN layer 16 is located onthe n-GaN layer 12. The depicted structure is merely representative of astructure that may be grown in accordance with the present invention,and is not intended to limit the resulting structures in any manner.Specifically, the resulting structure is not limited to a SiC substrate,but may also include a GaN or sapphire substrate or other substratesknown in the art. Similarly, the layers grown on the substrate may bedifferent than those depicted. Suitable layers include Group III-Vlayers as well as others known in the art and are not limited to dopedlayers. As used herein, the term “substrate” refers to a substrate aswell as a substrate having one or more deposited layers of one or moredifferent materials thereon. The terms “substrate” and “wafer” are usedinterchangeably herein throughout.

Although structures that incorporate two or three layers (n and p-type)of gallium nitride are illustrated, those familiar with and of ordinaryskill in this art will recognize that the device can include one or morequantum wells, or superlattice structures or both and that the activelayer or layers can include a greater range of the Group III-V compoundsthan gallium nitride standing alone. These variations, however, need notbe elaborated in detail in order to clearly understand the invention,and thus, they are not discussed in detail herein. Thus, the relevantportions of more elaborate devices may also be referred to as, “activelayers,” “diode portions,” “diode regions,” or “diode structures,”without departing from the scope of the present invention.

For numerous reasons, a buffer layer is often included as part of thestructure between the silicon carbide substrate and the first galliumnitride (or other Group III-V) layer. In many cases, the buffer layercan comprise aluminum nitride (AIN), a fixed composition of AlGaN or agraded layer of aluminum gallium nitride (AlGaN) that progresses from ahigher aluminum concentration near the silicon carbide substrate to ahigher gallium nitride concentration at its interface with the galliumnitride epitaxial layer. Suitable buffer layers are also disclosed incommonly owned U.S. Pat. Nos. 6,373,077 and 6,630,690, which areincorporated herein by reference. Other structural portions that can beincorporated into devices of this type and with which the invention isparticularly suitable include superlattice structures for enhancing theoverall crystal stability of the device, quantum wells for enhancing theoutput of light or tuning it to a particular frequency, or multiplequantum wells for enhancing the brightness of the device by providingthe additional number of active layers and the relationships betweenthem. In addition, it may be desirable to passivate the exposed surfacesof the epitaxial layers of the device for environmental protection.

FIGS. 2A and 2B depict a schematic of an apparatus 20 according to thepresent invention for forming multilayer devices and a method of itsuse. The apparatus includes a transfer chamber 22 in communication withtwo chemical vapor deposition chambers 24, 26. The apparatus 20 alsoincludes two isolation valves 28, 30, each in communication with one CVDchamber 24, 26 and the transfer chamber 22; a loading valve 32 incommunication with the transfer chamber 22; and a load lock chamber 33.The load lock chamber 33 may be a glove box purged with dry gas (i.e.,Ar, N₂) or a vacuum chamber that can be purged prior to opening theloading valve 32 or a combination of the two. An input valve 35 incommunication with the load lock chamber 33 is included, as well as atransfer means 34 and at least one gas inlet 36. The isolation valves28, 30, the loading valve 32, and the input valve 35 are capable ofbeing selectively opened and closed, allowing the chambers to beisolated one from the other and from the outside atmosphere. Theapparatus 20 depicted in FIGS. 2A and 2B includes 3 gas inlets 36, 38,40. Each gas inlet 36, 38, 40 preferably includes a valve 46, 48, 50 toopen or close the inlet as desired. Gas inlets include, but are notlimited to, a transfer chamber inlet 36 and reaction chamber inlets 38,40. The apparatus also preferably includes a transfer chamber exhaust 42and reaction chamber exhausts 43, 44. Each exhaust 42, 43, 44 preferablyincludes a valve 52, 53, 54 to open or close the exhaust 42, 43, 44 asdesired. It should be noted that the apparatus could also containadditional chambers, such as deposition chambers, cooling chambers, orother chambers known in the art. Moreover, the apparatus could alsoinclude fewer inlets and exhausts than depicted in FIGS. 2A and 2B.Similarly, the apparatus could include more inlets and exhausts thandepicted.

In one embodiment of the present invention, a wafer 56, for example aSiC wafer, is placed in a load lock chamber 33 via an input valve 35while the loading valve 32 remains in a closed position. The wafer 56may optionally be located on a wafer carrier. After the wafer 56 isplaced in the load lock chamber 33, the input valve 35 is closed, theload lock chamber 33 is evacuated or purged with, for example, N₂, toremove O₂ and moisture, along with as many other impurities as possible,from the load lock chamber 33. The wafer 56 is then placed in a transferchamber 22 via a loading valve 32 while the isolation valves 28, 30 areclosed. More than one wafer may be transferred at this time. As depictedin FIG. 2A, a second chamber 26 is isolated from the transfer chamber 22by closing the isolation valve 30, and the wafer 56 is transferred tothe first chamber 24 while maintaining an appropriate ambient asdiscussed herein. Means for transferring the wafer include an arm. Afterthe wafer 56 is transferred to the first chamber 24, the isolation valve28 between the first chamber 24 and the transfer chamber 22 ispreferably closed during processing. An epitaxial layer, for example ann-type epitaxial layer, is then deposited on the wafer 56 by chemicalvapor deposition in the first chamber 24.

After deposition, the first chamber 24 is purged to reduce vapordeposition source gases and dopants remaining in the chamber 24 afterdeposition and the processed substrate 58 is transferred to the transferchamber 22 through the isolation valve 28 while minimizing growth stopeffects. As used herein, the term “purged” includes the step ofevacuating the chamber as well as the step of replacing one gas withanother. Growth stop effects are minimized by utilizing appropriateambients, such as H₂, N₂, noble gases, or Group V gases. Pressuressuitable to vapor deposition growth techniques may also be utilized.During transfer, the isolation valve 30 between the transfer chamber 22and the second chamber 26 remains closed to prevent relevant dopantgases present in the first chamber 24 from entering the second chamber26 and affecting later deposition in the second chamber 26. Theminimization of growth stop effects occurs by maintaining the substratein an ambient that minimizes growth stop effects. The growth stopeffects are preferably minimized by maintaining positive flow ofreactant gases throughout the apparatus.

The deposition of a second epitaxial layer is depicted in FIG. 2B. Asseen in the figure, the isolation valve 28 between the first chamber 24and the transfer chamber 22 is closed and the isolation valve 30 betweenthe transfer chamber 22 and the second chamber 26 is opened. The wafer58 is then transferred via a transferring means 34 into the secondchamber 26. After the wafer 58 is transferred to the second chamber 26,the isolation valve 30 between the second chamber 26 and the transferchamber 30 is preferably closed during epitaxial growth. An epitaxiallayer, for example a p-type epitaxial layer, is then deposited on thefirst epitaxial layer by chemical vapor deposition in the second chamber26.

After deposition, the second chamber 26 is purged to reduce the presenceof vapor deposition gases and dopants remaining in the chamber 26 afterdeposition, and the resulting device 60 is transferred to the transferchamber 22 through the isolation valve 30 while minimizing growth stopeffects. Growth stop effects are minimized by utilizing appropriateambients, such as H₂, N₂, noble gases, or Group V gases. Pressuressuitable to vapor deposition growth techniques may also be utilized.During transfer, the isolation valve 28 between the transfer chamber 22and the first chamber remains closed to prevent relevant dopant gasespresent in the second chamber 26 from entering the first chamber 24 andaffecting later deposition in the first chamber 24.

When the desired number of growth steps is completed, the processedwafer is transferred from the transfer chamber 22 to the load lockchamber 33 via the loading valve 32 and the loading valve 32 is closed.The input valve 35 remains closed during this transfer. After the loadlock chamber 33 has been returned to the appropriate atmosphere, theinput valve 35 is opened and the processed wafer is removed from theload lock chamber 33.

FIG. 3 depicts a representative multilayer structure 62, such as asemiconductor device precursor, grown in accordance with an additionalembodiment of the present invention. As with FIG. 1, FIG. 3 is merelyrepresentative of a structure that may be grown in accordance with thepresent invention, and is not intended to limit the resulting devices inany manner. Specifically, the resulting structure is not limited to aSiC substrate, but may also include a GaN or sapphire substrate or othersubstrates known in the art. Similarly, the layers grown on thesubstrate may be different than those depicted. Suitable layers includeGroup III-V layers as well as others known in the art and are notlimited to doped layers. As depicted in FIG. 3, an n-GaN layer 64 islocated on a SiC substrate 66. A p-GaN layer 68 is located on the n-GaN64 layer and an additional n-GaN layer 70 is located on the p-GaN layer68.

In one embodiment, the additional n-GaN layer 70 depicted in FIG. 3 maybe formed in the apparatus of FIGS. 2A and 2B by transferring theprocessed substrate 60 from the transfer chamber 22 through theisolation valve 28 into the first chamber 24 while isolating the secondchamber 26 from the transfer chamber 22. After transfer, a depositionstep may be conducted in the first chamber 24 to grow the desired layeronto the processed wafer 60.

After deposition, the first chamber 24 is purged to reduce the presenceof vapor deposition gases and dopants remaining in the chamber 24 afterdeposition, and the substrate is transferred to the transfer chamber 22through the isolation valve 28 while minimizing growth stop effects.Growth stop effects are minimized by utilizing appropriate ambients,such as H₂, N₂, noble gases, or Group V gases. Pressures suitable tovapor deposition growth techniques may also be utilized. Duringtransfer, the isolation valve 30 between the transfer chamber 22 and thesecond chamber 26 remains closed to prevent relevant dopant gasespresent in the first chamber 24 from entering the second chamber 26 andaffecting later deposition in the second chamber 26.

In another embodiment, the additional n-GaN layer 70 depicted in FIG. 3is deposited in a third deposition chamber. FIGS. 4A-4C are schematicillustrations of an apparatus 72 according to the present invention forforming multilayer devices and a method of its use. The apparatus 72includes a transfer chamber 74 in communication with each of threechemical vapor deposition chambers 76, 78, 80. The apparatus 72 alsoincludes three isolation valves 82, 84, 86 each in communication withone of the CVD chambers 76, 78, 80 and the transfer chamber 74; aloading valve 88 in communication with the transfer chamber 74, and aload lock chamber 89. The load lock chamber 89 may be a glove box purgedwith dry gas (i.e., N₂, Ar) or a vacuum chamber that can be purged priorto opening the loading valve 88. An input valve 91 in communication withthe load lock chamber 89 is included, as well as a transfer means 84 andat least one gas inlet 90. The isolation valves 82, 84, 86; the loadingvalve 88; and the input valve 91 are capable of being selectively openedand closed, allowing the chambers 74, 76, 78, 80 to be isolated one fromthe other. The apparatus 72 depicted in FIGS. 4A-4C includes 4 gasinlets 90, 92, 94, 96. Each gas inlet 90, 92, 94, 96 preferably includesa valve 102, 104, 106, 108 to open or close the inlet 90, 92, 94, 96 asdesired. Gas inlets include, but are not limited to, a transfer chamberinlet 90, and reaction chamber inlets 92, 94, 96. The apparatus alsopreferably includes a transfer chamber exhaust 98 and reaction chamberexhausts 99, 100, 101. Each exhaust 98, 99, 100, 101 preferably includesa valve 109, 110, 111, 112 to open or close the exhaust 98, 99, 100, 101as desired. It should be noted that the apparatus 72 could also containadditional chambers, such as deposition chambers, cooling chambers, orother chambers known in the art as well as additional or fewer inletsand exhausts.

In an embodiment of the present invention, a wafer 114, for example aSiC wafer, is placed in a load lock chamber 89 via an input valve 91while the loading valve 88 remains in a closed position. The after 114may optionally be located on a wafer carrier. After the wafer 114 isplaced in the load lock chamber 89, the input valve 91 is closed, andthe load lock chamber 89 is purged with, for example, N₂, to remove O₂and moisture, along with any other impurities, from the load lockchamber 89. the wafer 114 is then placed in a transfer chamber 74 via aloading valve 88 while the isolation valves 82, 84, 86 are closed. Morethan one wafer may be transferred at this time. As depicted in FIG. 4A,the second and third chambers 78, 80 are isolated from the transferchamber 74 by closing the isolation valves 84, 86, and the wafer 114 istransferred to the first chamber 76 while maintaining an appropriateambient as discussed herein. After the wafer 114 is transferred to thefirst chamber 76, the isolation valve 82 between the first chamber 76and the transfer chamber 74 is preferably closed during processing. Anepitaxial layer, for example an n-type epitaxial layer, is thendeposited on the wafer 116 by chemical vapor deposition in the firstchamber 76.

After deposition, the first chamber 76 is purged to reduce vapordeposition source gases and dopants remaining in the chamber 76 afterdeposition and the processed substrate 116 is transferred to thetransfer chamber 74 through the isolation valve 82 while minimizinggrowth stop effects. Growth stop effects are minimized by utilizingappropriate ambients, such as H₂, N₂, noble gases, or Group V gases.Pressures suitable to vapor deposition growth techniques may also beutilized. During transfer, the isolation valves 84, 86 between thetransfer chamber 74 and the second and third chambers 78, 80 remainclosed to prevent relevant dopant gases present in the first chamber 76from entering the second and third chambers 78, 80 and affecting laterdeposition in the second and third chambers 78, 80.

The deposition of a second epitaxial layer is depicted in FIG. 4B. Asseen in the figure, the isolation valves 82, 86 between the transferchamber 74 and the first and third chambers 76, 80 are closed and theisolation valve 84 between the transfer chamber 74 and the secondchamber 78 is opened. The wafer 116 is then transferred via atransferring means 118 into the second chamber 78. After the wafer 116is transferred to the second chamber 78, the isolation valve 84 betweenthe second chamber 78 and the transfer chamber 74 is preferably closedduring processing. An epitaxial layer, for example a p-type epitaxiallayer, is then deposited on the first epitaxial layer by chemical vapordeposition in the second chamber 78.

After deposition, the second chamber 78 is purged to reduce the presenceof vapor deposition gases and dopants remaining in the chamber 78 afterdeposition, and the resulting device 120 is transferred to the transferchamber 74 through the isolation valve 84 while minimizing growth stopeffects. Growth stop effects are minimized by utilizing appropriateambients, such as H₂, N₂, noble gases, or Group V gases. Pressuressuitable to vapor deposition growth techniques may also be utilized.During transfer, the isolation valve 82, 86 between the transfer chamber74 and the first and third chambers 76, 80 remain closed to preventrelevant dopant gases present in the second chamber 78 from entering thefirst and third chambers 76, 80 and affecting later deposition.

The deposition of a third epitaxial layer is depicted in FIG. 4C. Asseen in the figure, the isolation valves 82, 84 between the transferchamber 74 and the first and second chambers 76, 78 are closed and theisolation valve 86 between the transfer chamber 74 and the third chamber80 is opened. The wafer 120 is then transferred via a transferring means122 into the third chamber 80. After the wafer 120 is transferred to thethird chamber 80, the isolation valve 86 between the third chamber 80and the transfer chamber 74 is preferably closed during processing. Anepitaxial layer, for example an n-type epitaxial layer, is thendeposited on the first epitaxial layer by chemical vapor deposition inthe third chamber 80.

After deposition, the third chamber 80 is purged to reduce the presenceof vapor deposition gases and dopants remaining in the chamber 80 afterdeposition, and the resulting device 124 is transferred to the transferchamber 74 through the isolation valve 86 while minimizing growth stopeffects. Growth stop effects may be minimized by utilizing appropriateambients, such as H₂, N₂, noble gases, or Group V gases if additionaldeposition steps are to be conducted. Pressures suitable to vapordeposition growth techniques may also be utilized. During transfer, theisolation valves 82, 84 between the transfer chamber 74 and the firstand second chambers 76, 78 remain closed to prevent relevant dopantgases in the third chamber 80 from entering the first and secondchambers 76, 78 and affecting later deposition.

Preferred carrier (or flow) gases include noble gases, nitrogen, argon,and hydrogen. Preferred Group III source gases for the formation ofGroup III-V epitaxial layers are trimethyl gallium, triethyl gallium,gallium halides, diethyl gallium halide, trimethyl aluminum, triethylaluminum, aluminum halides, diethyl aluminum halide, trimethyl indium,triethyl indium, indium halides, diethyl indium halide, trimethyl aminealane and mixtures thereof. Other Group III source gases known in theart are also contemplated as suitable for use in the present invention.Preferred Group V sources gases for the formation of Group III-Vepitaxial layers are selected from the group consisting of ammonia,arsine, phosphine, symmetrical dimethyl hydrazine, unsymmetricaldimethyl hydrazine, t-butyl hydrazine, arsenic and phosphorousequivalents thereof, and mixtures thereof. Other Group V source gasesknown in the art are also contemplated as suitable for use in thepresent invention. When trimethylgallium and ammonia are selected as thereactant gases, the resulting epitaxial layers are GaN layers. While theinvention has been described with reference to Group III-V epilayers,other epilayers known in the art are also contemplated as suitable foruse in devices formed in accordance with the present invention.

The epitaxial layers may be selectively doped or undoped. Each chemicalvapor deposition chamber is preferably dedicated for use with a singledopant gas or combination of dopant gases, such as where the chamber isto be used to deposit co-doped layers (e.g. GaN doped with both Si andZn). By dedicating each chemical vapor deposition chamber to a singledopant, reactant memory in the resulting devices is reduced. Dopants areselected for their acceptor or donor capabilities. Donor dopants arethose with n-type conductivity and acceptor dopants are those withp-type conductivity. With reference to Group III-V epilayers, suitablep-type dopants are selected from (but not necessarily limited to) thegroup consisting of Be, Mg, Zn, Ca, Mn, Sr, C, and mixtures thereof.Also with reference to Group III-V epilayers, suitable n-type dopantsare selected from the group consisting of Si, Ge, Sn, S, Se, and Te, andmixtures thereof. The dopants are supplied to the system via the use ofdopant gas sources containing the desired dopant atoms. Of course, ifepilayers other than Group III-V layers are implemented, suitable p-typeand n-type dopants for those layers are also contemplated in the methodof the present invention.

The epitaxial layers deposited in accordance with the present inventionmay each be independently formed of the same or different Group III-Vcompounds. When the different layers are formed of the same Group III-Vcompound, they may be doped differently. Although each depositionchamber is preferably dedicated to a single dopant atom, the Group IIIand Group V reactant gases may be varied in the individual depositionchambers during deposition. The Group III and Group V reactant gases mayalso be varied within a particular chamber during distinct depositionprocessing steps.

The apparatus of the present invention includes a single gas system, thesame gas system, similar gas systems, or separate gas systems. Separategas systems for maximizing throughput are especially preferred.Moreover, the use of a transfer chamber enables transfers betweendifferent ambients, including vacuum, N₂/H₂, noble gas, and Group Voverpressure.

As previously discussed, the present apparatus is not limited to threeCVD processing chambers. The apparatus may include as many processingchambers as allowed by cost, space, and need constraints.

In an alternative embodiment, when more dopants are required than thereare dedicated processing chambers, a bake-out step may be conducted inone chamber while deposition is occurring in a different depositionchamber. Alternative steps for removing memory effects in a growthdeposition chamber include coating, etching, and/or purging the relevantchamber while deposition occurs in a different chamber. The processallows deposition to continue without growth stop effects and loss ofprocessing time during the bake-out procedure. Moreover, additionaldopants may be introduced into different layers of the device asdesired.

In another embodiment, multiple deposition growth steps may occursimultaneously in different growth chambers. For example, while ann-type layer is being deposited on a substrate in a first depositionchamber 24, a p-type layer could be deposited on a different substratein a second deposition chamber 26. Distinct deposition steps could becarried out in each of the deposition chambers simultaneously. Moreover,the start and stop times of the deposition steps can be the same ordifferent for each deposition chamber. Additionally, more than one wafermay be present in any deposition chamber during epitaxial growth or inthe transfer chamber.

In the drawings and specification, there have been disclosed typicalembodiments of the invention, and, although specific terms have beenemployed, they have been used in a generic and descriptive sense onlyand not for purposes of limitation, the scope of the invention being setforth in the following claims.

1. A method of conducting multiple step multiple chamber vapordeposition while avoiding reactant memory in the relevant reactionchambers, the method comprising: depositing a layer of a firstsemiconductor material on a substrate using vapor deposition in a firstdeposition chamber; purging the first deposition chamber to reduce vapordeposition source gases remaining in the first deposition chamberfollowing the deposition growth and prior to opening the chamber;transferring the substrate to a second deposition chamber whileisolating the first deposition chamber from the second depositionchamber to thereby prevent reactants present in the first chamber fromaffecting deposition in the second chamber and while maintaining thesubstrate in an ambient that minimizes or eliminates growth stopeffects; thereafter depositing a second layer of a differentsemiconductor material on the substrate in the second chamber usingvapor deposition; purging the second deposition chamber to reduce vapordeposition source gases remaining in the second deposition chamberfollowing the deposition growth and prior to opening the seconddeposition chamber; transferring the substrate to the first depositionchamber while isolating the second deposition chamber from the firstdeposition chamber to thereby prevent reactants present in the secondchamber from affecting deposition in the first deposition chamber andwhile maintaining the substrate in an ambient that minimizes oreliminates growth stop effects; and thereafter depositing an additionallayer of the first semiconductor material on the second deposited layerin the first chamber using vapor deposition.
 2. A deposition methodaccording to claim 1 wherein the step of depositing a differentsemiconductor material comprises depositing the same material with adifferent dopant.
 3. A deposition method according to claim 1 whereinthe step of transferring the substrate from the first deposition chamberwhile isolating the chambers comprises: transferring the substrate fromthe first deposition chamber to a transfer chamber while isolating thesecond deposition chamber from the transfer chamber; and thereaftertransferring the substrate from the transfer chamber to the seconddeposition chamber while isolating the first deposition chamber from thetransfer chamber.
 4. A deposition method according to claim 1 whereinthe step of transferring the substrate from the second depositionchamber while isolating the chambers comprises: transferring thesubstrate from the second deposition chamber to a transfer chamber whileisolating the first deposition chamber from the transfer chamber; andthereafter transferring the substrate from the transfer chamber to thefirst deposition chamber while isolating the second deposition chamberfrom the transfer chamber.
 5. A deposition method according to claim 1further comprising transferring the substrate to a third depositionchamber while isolating the first and second deposition chambers fromthe third deposition chamber to thereby prevent reactants present in thefirst and second chamber from affecting deposition in the third chamberand while maintaining an ambient that minimizes or eliminates growthstop effects; and thereafter depositing a third layer of semiconductormaterial on the previously deposited layers in the third chamber usingvapor deposition.
 6. A deposition method according to claim 5 whereinthe step of depositing a third layer of semiconductor material comprisesdepositing a semiconductor material that is different from only one ofthe previously deposited materials.
 7. A method according to claim 1comprising supplying gas to the deposition chambers using a singe singlegas system, thereby providing a constant atmosphere in each of thedeposition chambers and the transfer chamber, to allow for fastertransfer times.
 8. A deposition method according to claim 1 comprisingsupplying gas to the deposition chambers from different gas systems,thereby providing distinct atmospheres in each of the depositionchambers.
 9. A deposition method according to claim 8 comprisingintroducing Group V source gases selected from the group consisting ofammonia, arsine, phosphine, symmetrical dimethyl hydrazine,unsymmetrical dimethyl hydrazine, t-butyl hydrazine, arsenic andphosphorous equivalents thereof, and mixtures thereof, and mixturesthereof, and depositing a Group Ill-V semiconductor material.
 10. Adeposition method according to claim 8 comprising introducing Group IIIsource gases selected from the group consisting of trimethyl gallium,triethyl gallium, gallium halides, diethyl gallium halide, trimethylaluminum, triethyl aluminum, aluminum halides, diethyl aluminum halide,trimethyl indium, triethyl indium, indium halides, diethyl indiumhalide, trimethyl amine alane, and mixtures thereof, and therebydepositing a Group Ill-V semiconductor material.
 11. A deposition methodaccording to claim 1 wherein the step of depositing a layer ofsemiconductor material on a substrate using vapor deposition in a firstdeposition chamber comprises introducing a source gas and an n-typedopant gas including atoms selected from the group consisting of Si, Ge,Sn, S, Se, Te, and mixtures thereof into the first deposition chamber.12. A deposition method according to claim 1 wherein the step ofdepositing a layer of semiconductor material on a substrate using vapordeposition in a second deposition chamber comprises introducing a sourcegas and a p-type dopant gas including atoms selected from the groupconsisting of Be, Mg, Zn, Ca, Mn, Sr, C, and mixtures thereof into thesecond deposition chamber.
 13. A deposition method according to claim 1wherein the step of depositing a layer of semiconductor material on apreviously deposited layer using vapor deposition in a second depositionchamber comprises introducing a source gas and a p-type dopant gasincluding atoms selected from the group consisting of Be, Mg, Zn, Ca,Mn, Sr, C, and mixtures thereof into the second deposition chamber. 14.A deposition method according to claim 1 wherein the step of depositinga layer of semiconductor material on a previously deposited layer usingvapor deposition in a second deposition chamber comprises introducing asource gas and a n-type dopant gas including atoms selected from thegroup consisting of Si, Ge, Sn, S, Se, Te, and mixtures thereof into thesecond deposition chamber.
 15. A deposition method according to claim 1wherein the step of depositing a third layer of semiconductor materialon a second deposited layer using vapor deposition in a first depositionchamber comprises introducing a source gas and a p-type dopant gasincluding atoms selected from the group consisting of Be, Mg, Zn, Ca,Mn, Sr, C, and mixtures thereof into the first deposition chamber.
 16. Adeposition method according to claim 1 wherein the step of depositing athird layer of semiconductor material on a second deposited layer usingvapor deposition in a first deposition chamber comprises introducing asource gas and a n-type dopant gas including atoms selected from thegroup consisting of Si, Ge, Sn, S, Se, Te, and mixtures thereof into thefirst deposition chamber.
 17. A deposition method according to claim 1wherein the substrate is located on a wafer carrier.
 18. A depositionmethod according to claim 17 wherein more than one substrate is locatedon the wafer carrier.
 19. A deposition method according to claim 17wherein the substrate is transferred to a second wafer carrier.
 20. Adeposition method according to claim 18 wherein each substrate on thewafer carrier is transferred to a second wafer carrier.
 21. A depositionmethod according to claim 1 wherein more than one substrate is beingprocessed.
 22. A deposition method according to claim 21 wherein atleast one substrate is at a different processing stage than at least oneother substrate.
 23. A method of conducting multiple step multiplechamber vapor deposition while avoiding reactant memory in the relevantreaction chambers, the method comprising: depositing a layer ofsemiconductor material on a substrate using vapor deposition in a firstdeposition chamber; purging the first deposition chamber to reduce vapordeposition source gases remaining in the first deposition chamberfollowing the deposition growth and prior to opening the chamber;transferring the substrate to a second deposition chamber whileisolating the first deposition chamber from the second depositionchamber to thereby prevent reactants present in the first chamber fromaffecting deposition in the second chamber and while maintaining thesubstrate in an ambient that minimizes or eliminates growth stopeffects; thereafter depositing a second layer of a differentsemiconductor material on the first deposited layer in the secondchamber using vapor deposition while baking out the first depositionchamber to remove any reactants present from the first deposition step;purging the second deposition chamber to reduce vapor deposition sourcegases remaining in the second deposition chamber following thedeposition growth and prior to opening the chamber; transferring thesubstrate to the first deposition chamber while isolating the seconddeposition chamber from the first deposition chamber to thereby preventreactants present in the second chamber from affecting deposition in thefirst chamber and while maintaining the substrate in an ambient thatminimizes or eliminates growth stop effects; and thereafter depositingan additional layer of a third semiconductor material on the seconddeposited layer in the first chamber using vapor deposition.
 24. Adeposition growth method according to claim 23 wherein the step oftransferring the substrate while isolating the chambers comprises:transferring the substrate from the first deposition chamber to atransfer chamber while isolating the second deposition chamber from thetransfer chamber; and hereafter transferring the substrate from thetransfer chamber to the second deposition chamber while isolating thefirst deposition chamber from the transfer chamber.
 25. A depositiongrowth method according to claim 23 wherein the respective depositionsteps comprise supplying gas to the deposition chambers using a singlegas system, thereby providing a constant atmosphere in each of thedeposition chambers and the transfer chamber, to allow for fastertransfer times.
 26. A deposition growth method according to claim 23wherein the respective deposition steps comprise supplying gas to thedeposition chambers from different gas systems, thereby providingdistinct atmospheres in each of the deposition chambers.
 27. Adeposition method according to claim 23 wherein the respectivedeposition steps comprise introducing Group V source gases selected fromthe group consisting of ammonia, arsine, phosphine, symmetrical dimethylhydrazine, unsymmetrical dimethyl hydrazine, t-butyl hydrazine, arsenicand phosphorous equivalents thereof, and mixtures thereof, anddepositing a Group Ill-V nitride semiconductor material.
 28. Adeposition method according to claim 23 wherein the respectivedeposition steps comprise introducing Group III source gases selectedfrom the group consisting of trimethyl gallium, triethyl gallium,gallium halides, diethyl gallium halide, trimethyl aluminum, triethylaluminum, aluminum halides, diethyl aluminum halide, trimethyl indium,triethyl indium, indium halides, diethyl indium halide, trimethyl aminealane, and mixtures thereof, and thereby depositing a Group Ill-Vsemiconductor material.
 29. A deposition method according to claim 23wherein the step of depositing a layer of semiconductor material on asubstrate using vapor deposition in a first deposition chamber comprisesintroducing a source gas and an n-type dopant gas including atomsselected from the group consisting of Si, Ge, Sn, S, Se, Te, andmixtures thereof into the first deposition chamber.
 30. A depositionmethod according to claim 23 wherein the step of depositing a layer ofsemiconductor material on a substrate using vapor deposition in a firstdeposition chamber comprises introducing a source gas and a p-typedopant gas including atoms selected from the group consisting of Be, Mg,Zn, Ca, Mn, Sr, C, and mixtures thereof into the first depositionchamber.
 31. A deposition method according to claim 23 wherein the stepof depositing a layer of semiconductor material on a substrate usingvapor deposition in a second deposition chamber comprises introducing asource gas and a p-type dopant gas including atoms selected from thegroup consisting of Be, Mg, Zn, Ca, Mn, Sr, C, and mixtures thereof intothe second deposition chamber.
 32. A deposition method according toclaim 23 wherein the step of depositing a layer of semiconductormaterial on a substrate using vapor deposition in a second depositionchamber comprises introducing a source gas and a n-type dopant gasincluding atoms selected from the group consisting of Si, Ge, Sn, S, Se,Te, and mixtures thereof into the second deposition chamber.
 33. Adeposition growth method according to claim 23 wherein the step ofdepositing a third layer of semiconductor material on a substrate usingvapor deposition in the first deposition chamber comprises introducing asource gas and a p-type dopant gas including atoms selected from thegroup consisting of Be, Mg, Zn, Ca, Mn, Sr, C, and mixtures thereof intothe first deposition chamber.
 34. A deposition growth method accordingto claim 23 wherein the step of depositing a third layer ofsemiconductor material on a substrate using vapor deposition in thefirst deposition chamber comprises introducing a source gas and ann-type dopant gas including atoms selected from the group consisting ofSi, Ge, Sn, S, Se, Te, and mixtures thereof into the first depositionchamber.
 35. A deposition method according to claim 23 wherein thesubstrate is located on a wafer carrier.
 36. A deposition methodaccording to claim 35 wherein more than one substrate is located on thewafer carrier.
 37. A deposition method according to claim 35 wherein thesubstrate is transferred to a second wafer carrier.
 38. A depositionmethod according to claim 23 wherein more than one substrate is beingprocessed.
 39. A deposition method according to claim 38 wherein atleast one substrate is at a different processing stage than at least oneother substrate.
 40. A method of conducting multiple step multiplechamber vapor deposition while avoiding reactant memory in the relevantreaction chambers, the method comprising: depositing a layer ofsemiconductor material on a substrate using vapor deposition in a firstdeposition chamber; purging the first deposition chamber to reduce vapordeposition source gases remaining in the first deposition chamberfollowing the deposition growth and prior to opening the chamber;transferring the substrate to a second deposition chamber whileisolating the first deposition chamber from the second depositionchamber to thereby prevent reactants present in the first chamber fromaffecting deposition in the second chamber and while maintaining thesubstrate in an ambient that minimizes or eliminates growth stopeffects; thereafter depositing an additional layer of a differentsemiconductor material on the first deposited layer in the secondchamber using vapor deposition; thereafter transferring the substrate toa third deposition chamber while isolating the first and seconddeposition chambers from the third deposition chamber to thereby preventreactants present in the first and second chamber from affectingdeposition in the third chamber and while maintaining the substrate inan ambient that minimizes or eliminates growth stop effects; andthereafter depositing an additional layer of a different semiconductormaterial on the substrate in the third chamber using vapor deposition inwhich the additional layer is different from only one of the previouslydeposited materials.
 41. A method of conducting multiple step multiplechamber vapor deposition while avoiding reactant memory in the relevantreaction chambers, the method comprising: depositing a layer ofsemiconductor material on more than one a substrate on a wafer carrierusing vapor deposition in a first deposition chamber; purging the firstdeposition chamber to reduce vapor deposition source gases remaining inthe first deposition chamber following the deposition growth and priorto opening the chamber; transferring the substrates substrate to asecond deposition chamber on a second wafer carrier while isolating thefirst deposition chamber from the second deposition chamber to therebyprevent reactants present in the first chamber from affecting depositionin the second chamber and while maintaining the substrate in an ambientthat minimizes or eliminates growth stop effects; thereafter depositingan additional layer of a different semiconductor material on the firstdeposited layer in the second deposition chamber using vapor deposition;wherein one of the layers of semiconductor material is a p-type groupIII-V layer and the other layer of semiconductor material is an n-typegroup III-V layer.
 42. The method of claim 41 wherein the layers ofsemiconductor material are deposited by epitaxial growth.
 43. The methodof claim 42 further comprising producing at least one of a quantum welland a superlattice structure during the multiple step multiple chambervapor deposition.
 44. The method of claim 42 wherein at least one of then-type group III-V layer and the p-type group III-V layer comprisesgallium nitride.
 45. The method of claim 41 wherein the transferring thesubstrate to the second deposition chamber while isolating the chamberscomprises: transferring the substrate from the first deposition chamberto a transfer chamber while isolating the second deposition chamber fromthe transfer chamber; and thereafter transferring the substrate from thetransfer chamber to the second deposition chamber while isolating thefirst deposition chamber from the transfer chamber.
 46. The method ofclaim 42 further comprising supplying ambient source gas to at least oneof the deposition chambers, wherein the ambient source gas is selectedfrom a group consisting of trimethyl gallium, triethyl gallium, galliumhalides, diethyl gallium halide, trimethyl aluminum, triethyl aluminum,aluminum halides, diethyl aluminum halide, trimethyl indium, triethylindium, indium halides, diethyl indium halide, trimethyl amine alane,and mixtures thereof.
 47. The method of claim 42 wherein the depositingof the p-type group III-V layer comprises introducing a p-type dopantgas including atoms selected from the group consisting of Be, Mg, Zn,Ca, Mn, Sr, C, and mixtures thereof into the deposition chamber.
 48. Themethod of claim 42 wherein the depositing of the n-type group III-Vlayer comprises introducing an n-type dopant gas including atomsselected from the group consisting of Si, Ge, Sn, S, Se, Te, andmixtures thereof into the deposition chamber.
 49. The method of claim 48wherein the depositing of the p-type group III-V layer comprisesintroducing a p-type dopant gas including atoms selected from the groupconsisting of Be, Mg, Zn, Ca, Mn, Sr, C, and mixtures thereof into thedeposition chamber.
 50. The method of claim 41 wherein the substrate islocated on a wafer carrier.
 51. The method of claim 50 wherein more thanone substrate is located on the wafer carrier.
 52. The method of claim50 wherein the substrate is transferred to a second wafer carrier.
 53. Amethod of conducting multiple step multiple chamber vapor deposition,the method comprising: depositing a layer of semiconductor material on asubstrate using vapor deposition in a first deposition chamber; purgingthe first deposition chamber to reduce vapor deposition source gasesremaining in the first deposition chamber following the depositiongrowth and prior to opening the chamber; and transferring the substrateto a second deposition chamber while isolating the first depositionchamber from the second deposition chamber to thereby prevent reactantspresent in the first chamber from affecting deposition in the secondchamber and while maintaining the substrate in an ambient that minimizesor eliminates growth stop effects; and thereafter depositing anadditional layer of a semiconductor material on the first depositedlayer in the second chamber using vapor deposition; wherein thedepositing of at least one of the layers of semiconductor materialcomprises depositing the layer of semiconductor material at hightemperature.
 54. The method of claim 53 wherein the substrate is raisedto a temperature of at least about 960 degrees C. while in at least oneof the deposition chambers.
 55. The method of claim 53 wherein thetransferring the substrate to the second deposition chamber whileisolating the chambers comprises: transferring the substrate from thefirst deposition chamber to a transfer chamber while isolating thesecond deposition chamber from the transfer chamber; and thereaftertransferring the substrate from the transfer chamber to the seconddeposition chamber while isolating the first deposition chamber from thetransfer chamber.
 56. The method of claim 53 wherein one of the layersof semiconductor material is a p-type group III-V layer and the otherlayer of semiconductor material is an n-type group III-V layer.
 57. Themethod of claim 56 wherein the layers of semiconductor material aredeposited by epitaxial growth.
 58. The method of claim 57 furthercomprising producing at least one of a quantum well and a superlatticestructure during the multiple step multiple chamber vapor deposition.59. The method of claim 58 wherein at least one of the n-type groupIII-V layer and the p-type group III-V layer comprises gallium nitride.60. The method of claim 56 further comprising supplying ambient sourcegas to at least one of the deposition chambers, wherein the ambientsource gas is selected from a group consisting of trimethyl gallium,triethyl gallium, gallium halides, diethyl gallium halide, trimethylaluminum, triethyl aluminum, aluminum halides, diethyl aluminum halide,trimethyl indium, triethyl indium, indium halides, diethyl indiumhalide, trimethyl amine alane, and mixtures thereof.
 61. The method ofclaim 56 wherein the depositing of the p-type group III-V layercomprises introducing a p-type dopant gas including atoms selected fromthe group consisting of Be, Mg, Zn, Ca, Mn, Sr, C, and mixtures thereofinto the deposition chamber.
 62. The method of claim 56 wherein thedepositing of the n-type group III-V layer comprises introducing ann-type dopant gas including atoms selected from the group consisting ofSi, Ge, Sn, S, Se, Te, and mixtures thereof into the deposition chamber.63. The method of claim 62 wherein the depositing of the p-type groupIII-V layer comprises introducing a p-type dopant gas including atomsselected from the group consisting of Be, Mg, Zn, Ca, Mn, Sr, C, andmixtures thereof into the deposition chamber.
 64. The method of claim 53wherein the substrate is located on a wafer carrier.
 65. The method ofclaim 64 wherein more than one substrate is located on the wafercarrier.
 66. The method of claim 64 wherein the substrate is transferredto a second wafer carrier.